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| Ordering number : ENN8197 VEC2605 P-Channel and N-Channel Silicon MOSFET VEC2605 Features * * General-Purpose Switching Device Applications * * Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions P-channel N-channel 20 10 3 12 0.9 Unit V V A A W C C -20 10 --1 --4 0.8 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=--500mA, VGS=--4V ID=--300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz --20 --1 10 --0.4 0.72 1.2 380 540 115 23 15 500 760 --1.4 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : BV Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505PF TS IM TB-00001142 No.8197-1/6 VEC2605 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=2A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 0.5 3.2 5.4 44 51 570 110 80 13.5 55 80 70 7.6 1.2 2.1 0.85 1.2 58 73 20 1 10 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A IS=--1A, VGS=0 Ratings min typ 8 11 17 13 1.5 0.4 0.3 --0.89 --1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2227A 0.25 Electrical Connection 8 0.15 7 6 5 0.3 8 7 65 0.25 1 2 2.9 3 0.65 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 2.8 2.3 Top view 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No.8197-2/6 VEC2605 Switching Time Test Circuit [P-channel] VIN 0V --4V VIN ID= --0.5A RL=20 VOUT VDD= --10V 4V 0V VIN ID=1.5A RL=6.67 VOUT [N-channel] VIN VDD=10V D PW=10s D.C.1% D PW=10s D.C.1% G G VEC2605 P.G 50 P.G 50 VEC2605 S S --1.0 ID -- VDS --3 .0V --2 .5 V --6.0 V --5.0 V [Pch] . --2 0V 3.0 ID -- VDS V [Nch] 1.5 V V 2.5V 4.0 V 3.0 --0.9 --0.8 V --4. 0 Drain Current, ID -- A --8.0 V --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 Drain Current, ID -- A --10 V 1.5 1.0 0.5 10V --1.5V 8.0V 2.0 6.0 V 2.5 5.0 2.0 V VGS= --1.0V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0.1 0.2 VGS=1.0V 0.3 0.4 IT08593 Drain-to-Source Voltage, VDS -- V --1.0 IT08592 Drain-to-Source Voltage, VDS -- V 3.0 ID -- VGS [Pch] Ta= --25 C 25 75C C ID -- VGS [Nch] VDS= --10V --0.8 VDS=10V 2.5 Drain Current, ID -- A Drain Current, ID -- A 2.0 --0.6 1.5 --0.4 C --25 C Ta=7 5C 1.0 1.0 25 C Ta= 75 0.5 0 0 --0.5 --1.0 --1.5 --2.0 IT08594 0 0 0.5 1.5 2.0 IT08595 Gate-to-Source Voltage, VGS -- V 800 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 70 [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- VGS 25 --0.2 C --25 C [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 700 60 600 500 50 400 ID =2A 40 300 ID= -0.3 ID= -0.5 A ID =1A 30 A 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 20 0 1 2 3 4 5 6 7 8 9 10 Gate-to-Source Voltage, VGS -- V IT08707 Gate-to-Source Voltage, VGS -- V IT08597 No.8197-3/6 VEC2605 800 RDS(on) -- Ta [Pch] 80 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 700 Static Drain-to-Source On-State Resistance, RDS(on) -- m 70 600 500 I D= 3 --0. A -S= , VG 2 .5V 60 400 -I D= , VG 0.5A -S= 4.0V 50 1A I D= 2. S= , VG 5V 40 300 I D= =4.0 , VGS 2A V 200 100 --60 30 --40 --20 0 20 40 60 80 100 120 20 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 5 IT08598 yfs -- ID Ambient Temperature, Ta -- C 10 IT08599 [Pch] Forward Transfer Admittance, yfs -- S VDS= --10V VDS=10V 7 yfs -- ID [Nch] Forward Transfer Admittance, yfs -- S 3 2 5 Ta 1.0 7 5 C 25 = -C 75 = Ta 3 --2 C 5 C 75 25 C 2 25 C 3 --0.1 2 3 5 7 --1.0 2 3 1.0 0.1 2 3 5 7 1.0 2 3 5 IT08601 Drain Current, ID -- A --10 7 5 3 2 IT08600 IF -- VSD Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2 [Pch] IF -- VSD VGS=0 [Nch] VGS=0 Forward Current, IF -- A --0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT08602 --0.001 --0.2 75 25 C --25 C C 0.4 0.6 --0.1 7 5 3 2 Ta= 75 C 25 C --25 C --1.0 7 5 3 2 Forward Current, IF -- A Ta= 0.8 1.0 1.2 1.4 IT08708 Diode Forward Voltage, VSD -- V 5 SW Time -- ID Diode Forward Voltage, VSD -- V 5 3 [Pch] VDD=10V VGS=4V SW Time -- ID [Nch] Switching Time, SW Time -- ns Switching Time, SW Time -- ns 3 2 VDD= --10V VGS= --4V td (off) tf 2 100 7 5 3 2 10 7 5 td(off) tf td(on) tr tr td(on) 3 10 2 --0.1 2 3 5 7 --1.0 IT08604 7 0.1 2 3 5 7 1.0 2 3 5 7 Drain Current, ID -- A Drain Current, ID -- A IT08709 No.8197-4/6 VEC2605 3 2 1000 Ciss, Coss, Crss -- VDS [Pch] 2 Ciss, Coss, Crss -- VDS [Nch] f=1MHz f=1MHz Ciss Ciss, Coss, Crss -- pF 100 7 5 Ciss, Coss, Crss -- pF 7 5 3 2 Ciss 3 2 Coss Coss 100 7 Crss Crss 10 7 0 --5 --10 --15 IT08606 5 3 0 5 10 15 20 IT08607 Drain-to-Source Voltage, VDS -- V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS -- Qg Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 [Pch] VDS=10V ID=3A VGS -- Qg [Nch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1A 1.4 1.6 0 1 2 3 4 5 6 7 8 IT08609 Total Gate Charge, Qg -- nC 7 5 3 2 IT08608 Total Gate Charge, Qg -- nC 3 2 10 7 5 ASO IDP= --4A 1m [Pch] <10s s 10 ASO IDP=12A ID=3A [Nch] <10s 1m 10 Drain Current, ID -- A --1.0 7 5 3 2 --0.1 7 5 3 2 s Drain Current, ID -- A ID= --1A m s 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 op er m s 10 0m s 0m on Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 D C s op er ati at io n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 --0.01 --0.01 Drain-to-Source Voltage, VDS 1.0 5 7 --10 2 3 -- V IT08610 0.01 0.01 Drain-to-Source Voltage, VDS -- V 1.2 IT08611 PD -- Ta [Pch] Allowable Power Dissipation, PD -- W PD -- Ta [Nch] Allowable Power Dissipation, PD -- W 0.8 1.0 0.9 0.8 M ou M nt ed ou 0.6 on nte ac do er na am ce ic bo 0.6 ram ic 0.4 ar d( bo 90 ard 0m (9 0.2 m2 !0 0.4 00 mm 2 .8m !0 .8 m )1 0.2 mm un )1 it 160 un it 160 0 0 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT08612 Ambient Temperature, Ta -- C IT08613 No.8197-5/6 VEC2605 Note on usage : Since the VEC2605 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8197-6/6 |
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